CUED Publications database

Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition

Zheng, S and Zhong, G and Wu, X and D'Arsie, L and Robertson, J (2017) Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition. RSC ADVANCES, 7. pp. 33185-33193. ISSN 2046-2069

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Abstract

We study the metal-catalyst-free growth of uniform and continuous graphene films on different insulating substrates by microwave plasma-enhanced chemical vapor deposition (PECVD) with a gas mixture of C2H2, NH3, and H2 at relatively low temperature of 700 ∼ 750°C. Compared to growth using only C2H2 and H2, the use of NH3 during synthesis is found to be beneficial, in transforming vertical graphene nano-walls into a layer-by-layer film, reducing the density of defects, and improving the graphene quality. The effect of different insulating substrates (including Al2O3 and SiO2) on the growth of graphene was studied under different growth temperatures, implying the growth-temperature window and catalytic effect vary among insulators. The low activation energy barrier of Al2O3 proves it to be a more suitable substrate for the metal-catalyst-free growth of graphene at low temperature. These directly grown graphene films on insulators can be conveniently integrated into various electronic and optoelectronic applications avoiding any post-growth transfer process.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronic Devices & Materials
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:53
Last Modified: 17 Aug 2017 01:25
DOI: