CUED Publications database

High resistivity Metal-oxide Films through an Interlayer of Graphene Grown Directly on Copper Electrodes

Pfaendler, SM-L and Weatherup, R and Kidambi, PR and Hofmann, S and Flewitt, AJ High resistivity Metal-oxide Films through an Interlayer of Graphene Grown Directly on Copper Electrodes. Graphene Technology. (Unpublished)

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Abstract

Functional oxides are important materials for multiple applications in flexible and transparent electronics. Electrically contacting these oxides to form active channels is often challenging as they suffer significant alteration or instabilities when interfaced with metal electrodes. Here we demonstrate a new scheme to electrically contact thin films of semiconducting zinc tin oxide (ZnSnO) that employs pre-patterned copper electrodes encapsulated by chemical vapour deposited (CVD) graphene. Measurement of over more than 100 channels with varying geometry and nature of contact show that the bulk resistivity of the ZnSnO channels with graphene/Cu composite is at least two orders of magnitude larger than the same films deposited directly on aluminium (Al) contacts. Moreover, the ZnSnO channels with Cu/graphene contacts showed nearly ohmic transport, in contrast to space-charge limited conduction observed for other contacting schemes. Our results outline a new application of graphene in a step towards the development of alternative contacting strategies for oxide electronics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:54
Last Modified: 28 Sep 2017 01:39
DOI: