Lu, H and Guo, Y and Robertson, J (2017) Charge transfer doping of graphene without degrading carrier mobility. JOURNAL OF APPLIED PHYSICS, 121. ISSN 0021-8979
Full text not available from this repository.Abstract
Density functional calculations are used to analyze the charge transfer doping mechanism by molecules absorbed onto graphene. Typical dopants studied are AuCl3, FeCl3, SbF5, HNO3, MoO3, Cs2O, O2, and OH. The Fermi level shifts are correlated with the electron affinity or ionization potential of the dopants. We pay particular attention to whether the dopants form direct chemisorptive bonds which cause the underlying carbon atoms to pucker to form sp3 sites as these interrupt the p bonding of the basal plane, and cause carrier scattering and thus degrade the carrier mobility. Most species even those with high or low electronegativity do not cause puckering. In contrast, reactive radicals like -OH cause puckering of the basal plane, creating sp3 sites which degrade mobility.
Item Type: | Article |
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Subjects: | UNSPECIFIED |
Divisions: | Div B > Solid State Electronics and Nanoscale Science |
Depositing User: | Cron Job |
Date Deposited: | 17 Jul 2017 19:32 |
Last Modified: | 30 Mar 2021 06:42 |
DOI: | 10.1063/1.4985121 |