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Instability mechanisms in amorphous oxide semiconductors leading to a threshold voltage shift in thin film transistors

Flewitt, A and Niang, KM (2017) Instability mechanisms in amorphous oxide semiconductors leading to a threshold voltage shift in thin film transistors. ECS Transactions, 79. pp. 49-56. ISSN 1938-5862

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Abstract

© The Electrochemical Society. Amorphous indium gallium zinc oxide (a-IGZO) has been successfully employed commercially as the channel layer in thin film transistors (TFTs) for active-matrix flat panel displays. However, these TFTs are known to suffer from a threshold voltage shift upon application of a gate bias. The threshold voltage shift is reversible through annealing. A similar phenomenon is observed in other TFTs with an amorphous oxide semiconductor channel. The migration of oxygen vacancies is proposed as being the microscopic mechanism causing this effect as it can lead to a change in the equilibrium distribution of defect states in the band gap of the semiconductor. This would manifest itself as a reversible threshold voltage shift in the TFT transfer characteristics, as observed experimentally.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:11
Last Modified: 26 Oct 2017 01:55
DOI: