CUED Publications database

On the Investigation of the "anode Side" SuperJunction IGBT Design Concept

Antoniou, M and Lophitis, N and Udrea, F and Bauer, F and Vemulapati, UR and Badstuebner, U (2017) On the Investigation of the "anode Side" SuperJunction IGBT Design Concept. IEEE Electron Device Letters, 38. pp. 1063-1066. ISSN 0741-3106

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In this letter, we present the "anode-side" SuperJunction trench field stop+ IGBT concept with drift region SuperJunction pillars placed at the anode side of the structure rather than the cathode side. The extent of the pillars toward the cathode side is shown to pose a tradeoff between fabrication technology capabilities (and cost) versus the device performance, by extensive TCAD simulations. The proposed device structure simplifies the fabrication requirements by steering clear from the need to align the cathode side features with the SuperJunction pillars. It also provides an extra degree of freedom by decoupling the cathode design from the SuperJunction structure. Additionally, the presence of SuperJunction technology in the drift region of the "anode-side" SJ Trench FS+ IGBT results in 20% reduction of ON-state losses for the same switching energy losses or, up to 30% switching losses reduction for the same ON-state voltage drop, compared with a 1.2-kV breakdown rated conventional FS+ Trench IGBT device. The proposed structure also finds applications in reverse conducting IGBTs, where a reduced snapback can be achieved, and in MOS-controlled thyristor devices.

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 05 Sep 2017 01:40
Last Modified: 15 Apr 2021 05:09
DOI: 10.1109/LED.2017.2718619