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Research data supporting "Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films"

Han, S and Flewitt, AJ Research data supporting "Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu2O Thin Films". (Unpublished)

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Abstract

1) Hall_asdeposit.csv, Hall_500.csv, Hall_600.csv and Hall_700.csv: These are the Hall measurement data including the Hall mobility and carrier density of as-deposited and annealed films (500, 600 and 700 ¡ÆC) in Table 1. This raw data was used for calculating trapped hole densities (i.e. ptrap(Hall) and ptrap(DOS)) in Fig. 2(a), a GLC coefficient in Fig. 2(b), the mobilities in Fig. 3 and the density of copper vacancies in Fig. 5. 2) Eu.csv: This is used for extracting the Urbach energy (Eu) in Table 1. 3) DOS.csv: This is the raw data (extracted subgab density of states) used to create Fig. 1. 4) SEM_asdeposit.tif, SEM_500.tif, SEM_600.tif and SEM_700.tif: These are SEM images of as-deposited and annealed films (500, 600 and 700 ¡ÆC) in Fig. 4(a) 5) XRD_asdeposit.uxd, XRD_500.uxd, XRD_600.uxd and XRD_700.uxd: These are the raw data of the XRD patterns of as-deposited and annealed films (500, 600 and 700 ¡ÆC). This data was used for estimating the grain size in Fig. 4(b). 6) Data for Figure 4c and 4d.csv: This is the raw data of Fig. 4(c) (i.e. extracted densities of free holes (pfree), trapped holes (ptrap) and total holes (ptotal), and the ratio of pfree to ptotal (beta_TLC) in the case of the as-deposited film) and of Fig. 4(d) (i.e. extracted beta_TLC of all samples).

Item Type: Article
Uncontrolled Keywords: cuprous oxide oxygen vacancy
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 25 Jul 2017 03:48
Last Modified: 12 Oct 2017 01:47
DOI: doi:10.17863/CAM.11903