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Universal Growth Scheme for Quantum Dots with Low Fine-Structure Splitting at Various Emission Wavelengths

Skiba-Szymanska, J and Stevenson, RM and Varnava, C and Felle, M and Huwer, J and Müller, T and Bennett, AJ and Lee, JP and Farrer, I and Krysa, AB and Spencer, P and Goff, LE and Ritchie, DA and Heffernan, J and Shields, AJ (2017) Universal Growth Scheme for Quantum Dots with Low Fine-Structure Splitting at Various Emission Wavelengths. Physical Review Applied, 8.

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Abstract

Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fiber-optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure splitting (FSS) between exciton eigenstates. Moreover, QDs can be engineered to emit at standard telecom wavelengths. To achieve sufficient signal intensity for applications, QDs have been incorporated into one-dimensional optical microcavities. However, combining these properties in a single device has so far proved elusive. Here, we introduce a growth strategy to realize QDs with small FSS in the conventional telecom band, and within an optical cavity. Our approach employs ''droplet-epitaxy'' of InAs quantum dots on (001) substrates. We show the scheme improves the symmetry of the dots by 72%. Furthermore, our technique is universal, and produces low FSS QDs by molecular beam epitaxy on GaAs emitting at ∼900 nm, and metal-organic vapor-phase epitaxy on InP emitting at ∼1550 nm, with mean FSS 4× smaller than for Stranski-Krastanow QDs.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Cron Job
Date Deposited: 20 Dec 2017 20:05
Last Modified: 13 Apr 2021 10:49
DOI: 10.1103/PhysRevApplied.8.014013