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Properties of GaN nanowires with Sc<inf>x</inf>Ga<inf>1−x</inf>N insertion

Bao, A and Goff, LE and Zhu, T and Sahonta, SL and Ritchie, DA and Joyce, HJ and Moram, MA and Oliver, RA (2017) Properties of GaN nanowires with Sc<inf>x</inf>Ga<inf>1−x</inf>N insertion. Physica Status Solidi (B) Basic Research, 254. ISSN 0370-1972

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Abstract

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim We report the first GaN nanowire structure incorporating a GaN/Sc x Ga 1–x N axial heterostructure. A 20 nm Sc x Ga 1−x N layer was inserted into GaN nanowires grown by a catalyst-free self-assembled method using plasma-assisted molecular beam epitaxy (PA-MBE). The insertion was characterised by energy dispersive X-ray spectroscopy in the scanning transmission electron microscope (STEM-EDX). High resolution electron microscopy revealed the Sc x Ga 1−x N to have a wurtzite crystal structure as expected at this composition. Cathodoluminescence (CL) imaging in the scanning electron microscope (SEM) at 77 K revealed an emission peak at 377 nm which is not present in samples without the Sc x Ga 1−x N insertion. A correlative study using STEM-EDX and low temperature SEM-CL indicates a direct link between the 377 nm emission and the Sc x Ga 1−x N insertion. This is tentatively attributed to a type-II band offset between the GaN and the Sc x Ga 1−x N insertion.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 09 Aug 2017 20:06
Last Modified: 18 Nov 2017 21:39
DOI: