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The Origin of the High Off-State Current in p-Type Cu<inf>2</inf>O Thin Film Transistors

Han, S and Flewitt, AJ (2017) The Origin of the High Off-State Current in p-Type Cu<inf>2</inf>O Thin Film Transistors. IEEE Electron Device Letters, 38. pp. 1394-1397. ISSN 0741-3106

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Abstract

© 1980-2012 IEEE. There is a need for a good quality p-type accumulation-mode thin film transistor (TFT) using a metal oxide semiconducting channel. P-type cuprous oxide (Cu 2 O) has been proposed as a suitable semiconductor, but such TFTs have suffered from unacceptably high off-state currents. This letter studies the main origin of this high off-state current. Capacitance-voltage characteristics reveal the accumulation of minority carriers (electrons) in the off-state regime (i.e., for a positive gate voltage). The activation energy extracted from the temperature dependence of the drain current as a function of gate voltage shows an abrupt lowering of the activation energy and pinning of the Fermi energy in the off-state region, which is attributed to subgap states at 0.38 eV from the conduction band minimum. This suggests that an electron flow in the off-state causes the high off-state current in p-type Cu 2 O TFTs and not an inability to deplete the channel of holes.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 30 Aug 2017 20:06
Last Modified: 24 Apr 2018 02:04
DOI: