CUED Publications database

Fabrication of high-mobility poly(3-hexylthiophene) transistors at ambient conditions

Lyashenko, DA and Zakhidov, AA and Pozdin, VA and Malliaras, GG (2010) Fabrication of high-mobility poly(3-hexylthiophene) transistors at ambient conditions. Organic Electronics, 11. pp. 1507-1510. ISSN 1566-1199

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Abstract

We report on the fabrication of high-mobility organic thin-film transistors (OTFTs) made and tested under ambient conditions. A bottom gate, bottom contact architecture was used with a layer of poly(3-hexylthiophene) deposited on a 50 nm thick Al O dielectric with pre-patterned Au source and drain electrodes. Fluoroalkyl trichlorosilane treatment of the Al O dielectric was found to significantly improve device performance. The field-effect hole mobility reproducibly reached 0.2 cm V s (best device 0.29 cm V s ) with an on/off ratio of 10 . Electrical and synchrotron X-ray scattering characterization shows that an interaction at the FOTS/P3HT interface is responsible for the high performance of these devices. The fabrication method described here is carried out under ambient conditions and does not require any post-deposition annealing or vacuum drying steps for the organic film; therefore it can simplify the manufacturing of OTFTs. © 2010 Elsevier B.V. All rights reserved. 2 3 2 3 2 -1 -1 2 -1 -1 4

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 10 Sep 2017 20:11
Last Modified: 01 Apr 2021 04:47
DOI: 10.1016/j.orgel.2010.05.016