CUED Publications database

Solvent vapor annealing of an insoluble molecular semiconductor

Amassian, A and Pozdin, VA and Li, R and Smilgies, DM and Malliaras, GG (2010) Solvent vapor annealing of an insoluble molecular semiconductor. Journal of Materials Chemistry, 20. pp. 2623-2629. ISSN 0959-9428

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Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry. 2

Item Type: Article
Depositing User: Cron Job
Date Deposited: 10 Sep 2017 20:11
Last Modified: 10 Apr 2021 01:01
DOI: 10.1039/b923375j