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Temperature- and field-dependent electron and hole mobilities in polymer light-emitting diodes

Bozano, L and Carter, SA and Scott, JC and Malliaras, GG and Brock, PJ (1999) Temperature- and field-dependent electron and hole mobilities in polymer light-emitting diodes. Applied Physics Letters, 74. pp. 1132-1134. ISSN 0003-6951

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Abstract

We have studied the transport properties of electron- and hole-dominated MEH-PPV, poly(2-methoxy,5-(2 ′ -ethyl-hexoxy)-p-phenylene vinylene), devices in the trap-free limit and have derived the temperature-dependent electron and hole mobilities (μ=μ 0 e γ√E ) from the space-charge-limited behavior at high electric fields. Both the zero-field mobility μ 0 and electric-field coefficient γ are temperature dependent with an activation energy of the hole and electron mobility of 0.38±0.02 and 0.34±0.02 eV, respectively. At 300 K, we find a zero-field mobility μ 0 on the order of 1±0.5×10 -7 cm 2 /V s and an electric-field coefficient γ of 4.8±0.3×10 -4 (m/V) 1/2 for holes. For electrons, we find a μ 0 an order of magnitude below that for holes but a larger γ of 7.8±0.5×10 -4 (m/V) 1/2 . Due to the stronger field dependence of the electron mobility, the electron and hole mobilities are comparable at working voltages in the trap-free limit, applicable to thin films of MEH-PPV. © 1999 American Institute of Physics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 10 Sep 2017 20:11
Last Modified: 21 Sep 2017 01:37
DOI: