CUED Publications database

Vertically-Illuminated, Resonant-Cavity-Enhanced, Graphene-Silicon Schottky Photodetectors

Casalino, M and Sassi, U and Goykhman, I and Eiden, A and Lidorikis, E and Milana, S and Fazio, DD and Tomarchio, F and Iodice, M and Coppola, G and Ferrari, AC Vertically-Illuminated, Resonant-Cavity-Enhanced, Graphene-Silicon Schottky Photodetectors. (Unpublished)

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We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. Our devices have wavelength-dependent photoresponse with external (internal) responsivity~20mA/W (0.25A/W). The spectral-selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for free-space optical communications, coherence optical tomography and light-radars

Item Type: Article
Uncontrolled Keywords: cond-mat.mes-hall cond-mat.mtrl-sci
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 06 Sep 2017 20:05
Last Modified: 26 Sep 2017 01:45