CUED Publications database

Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors.

Casalino, M and Sassi, U and Goykhman, I and Eiden, A and Lidorikis, E and Milana, S and De Fazio, D and Tomarchio, F and Iodice, M and Coppola, G and Ferrari, AC (2017) Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors. ACS Nano, 11. pp. 10955-10963.

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Abstract

We report vertically illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. We get a wavelength-dependent photoresponse with external (internal) responsivity ∼20 mA/W (0.25A/W). The spectral selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for optical communications, coherence optical tomography, and light-radars.

Item Type: Article
Uncontrolled Keywords: graphene internal photoemission photodetectors resonant cavity
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 06 Sep 2017 20:05
Last Modified: 22 Feb 2018 01:43
DOI: