CUED Publications database

Chip-on-board assembly of 800V Si L-IGBTs for high performance ultra-compact LED drivers

Aliyu, AM and Mouawad, B and Castellazzi, A and Rajaguru, P and Bailey, C and Pathirana, V and Udugampola, N and Trajkovic, T and Udrea, F (2017) Chip-on-board assembly of 800V Si L-IGBTs for high performance ultra-compact LED drivers. In: UNSPECIFIED pp. 431-434..

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This paper presents a novel chip on board assembly design for an integrated power switch, based on high power density 800V silicon lateral insulated gate bipolar transistor (Si LIGBT) technology. LIGBTs offer much higher current densities (5-lOX), significantly lower leakage currents, lower parasitic device capacitances and gate charge compared to conventional vertical MOSFETs commonly used in LED drivers. The higher voltage ratings offered (up to 1kV), the development of high voltage interconnection between parallel IGBTs, self-isolated nature and absence of termination region unlike in a vertical MOSFET makes these devices ideal for ultra-compact, low bill of materials (BOM) count LED drives. Chip on-board LIGBTs also offer significant advantages over MOSFETs due to high temperatures seen on most of the LED lamp enclosures as the LIGBT's on-state losses increase only marginally with temperature. The design is based on a built-in reliability approach which focuses on a compact LED driver as a case-study of a cost-sensitive large volume production item.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 15 Jan 2018 20:22
Last Modified: 15 Apr 2021 05:07
DOI: doi:10.23919/ISPSD.2017.7988976