CUED Publications database

Temperature Evolution in Nanoscale Carbon-Based Memory Devices Due to Local Joule Heating

Bachmann, TA and Alexeev, AM and Koelmans, WW and Zipoli, F and Ott, AK and Dou, C and Ferrari, AC and Nagareddy, VK and Craciun, MF and Jonnalagadda, VP and Curioni, A and Sebastian, A and Eleftheriou, E and Wright, CD (2017) Temperature Evolution in Nanoscale Carbon-Based Memory Devices Due to Local Joule Heating. IEEE Transactions on Nanotechnology, 16. pp. 806-811. ISSN 1536-125X

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Abstract

© 2002-2012 IEEE. Tetrahedral amorphous (ta-C) carbon-based memory devices have recently gained traction due to their good scalability and promising properties like nanosecond switching speeds. However, cycling endurance is still a key challenge. In this paper, we present a model that takes local fluctuations in sp 2 and sp 3 content into account when describing the conductivity of ta-C memory devices. We present a detailed study of the conductivity of ta-C memory devices ranging from ohmic behavior at low electric fields to dielectric breakdown. The study consists of pulsed switching experiments and device-scale simulations, which allows us for the first time to provide insights into the local temperature distribution at the onset of memory switching.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 03 Oct 2017 02:02
Last Modified: 10 Apr 2021 01:58
DOI: 10.1109/TNANO.2017.2674303