CUED Publications database

Proximity induced superconductivity in indium gallium arsenide quantum wells

Delfanazari, K and Puddy, R and Ma, P and Yi, T and Cao, M and Gul, Y and Farrer, I and Ritchie, D and Joyce, H and Kelly, M and Smith, C (2018) Proximity induced superconductivity in indium gallium arsenide quantum wells. Journal of Magnetism and Magnetic Materials, 459. pp. 282-284. ISSN 0304-8853 (Unpublished)

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We report on the experimental observation of the proximity induced superconductivity in an indium gallium arsenide (In0.75Ga0.25As) quantum well. The Josephson junction was fabricated by several photo-lithographic processes on an InGaAs heterojunction and Niobium (Nb) was used as superconducting electrodes. Owing to the Andreev reflections and Andreev bound states at the Nb-In0.75Ga0.25As quantum well-Nb interfaces, the subharmonic energy gap structures (SGS) are observed at the differential conductance (dI/dV) versus voltage (V) plots when the applied source-drain bias voltages satisfy the expression VSD = 2Δ/ne. The dI/dV as a function of applied magnetic field B shows a maximum at zero B which decreases by increasing B. When decreasing B to below ±0.4 T, a hysteresis and shift of the conductance maxima close to B = 0 T are observed. Our results help to pave the way to the development of integrated coherent quantum circuitry.

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Oct 2017 01:23
Last Modified: 21 Nov 2020 03:23
DOI: 10.1016/j.jmmm.2017.10.057