CUED Publications database

3-D Dual-Gate Photosensitive Thin-Film Transistor Architectures Based on Amorphous Silicon

Wang, K and Ou, H and Chen, J and Nathan, A and Deng, S and Xu, N (2017) 3-D Dual-Gate Photosensitive Thin-Film Transistor Architectures Based on Amorphous Silicon. IEEE Transactions on Electron Devices, 64. pp. 4952-4958. ISSN 0018-9383

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In contrast to the conventional planar p-i-n photodiode and a metal-semiconductor-metal photodetector, the 3-D dual-gate photosensitive thin-film transistor (TFT) architectures presented here attain excellent photoresponse characteristics. Operating the device in the subthreshold regime further boosts the photoconductive gain as a result of light-induced decrease in the threshold voltage. This paper presents design considerations along with a performance comparison between 3-D photosensitive TFTs that have pi - and FIN-shaped channels and conventional TFT with a planar channel. Our paper shows that the -shaped structure tends to have a higher sensitivity while the FIN-shaped counterpart is more responsive with wider dynamic range. For both structures, a measured photoconductive gain of 10 4 10 6 % is obtained with spectral responsivity ranging from near UV to near IR, and the photoresponse time in the range of tens of milliseconds. The 3-D dual-gate photosensitive TFT architecture appears to be very promising for large-area, low-level UV, visible, and IR detection applications.

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email
Date Deposited: 08 Dec 2017 20:20
Last Modified: 15 Apr 2021 03:07
DOI: 10.1109/TED.2017.2760320