CUED Publications database

Deep depletion concept for diamond MOSFET

Pham, TT and Rouger, N and Masante, C and Chicot, G and Udrea, F and Eon, D and Gheeraert, E and Pernot, J (2017) Deep depletion concept for diamond MOSFET. Applied Physics Letters, 111. ISSN 0003-6951

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A stable deep depletion regime is demonstrated in metal oxide semiconductor capacitors using p-type oxygen-terminated (100) diamond as a semiconductor and Al2O3 deposited by Atomic Layer Deposition at 380 °C. Current voltage I(V) and capacitance voltage C(V) measurements were performed to evaluate the effectiveness of diamond semiconductor gate control. An effective modulation of the space charge region width is obtained by the gate bias, where the deep depletion regime is demonstrated for a positive gate bias. The deep depletion concept is described and proposed for MOSFET devices. Finally, a proof of concept of diamond deep depletion MOSFETs is presented.

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 15 Jan 2018 20:22
Last Modified: 22 Apr 2021 06:49
DOI: 10.1063/1.4997975