CUED Publications database

Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors

Li, H and Guo, Y and Robertson, J (2017) Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors. Scientific Reports, 7. 16858-.

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Abstract

Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. Using amorphous ZnO as a simplified model system, we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors like In-Ga-Zn-O (IGZO).

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 05 Dec 2017 01:28
Last Modified: 15 Apr 2021 05:49
DOI: 10.1038/s41598-017-17290-5