CUED Publications database

Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

Mania, E and Alencar, AB and Cadore, AR and Carvalho, BR and Watanabe, K and Taniguchi, T and Neves, BRA and Chacham, H and Campos, LC (2017) Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures. 2D Materials, 4.

Full text not available from this repository.

Abstract

Steady doping, added to its remarkable electronic properties, would make graphene a valuable commodity in the solar cell market, as energy power conversion could be substantially increased. Here we report a graphene van der Waals heterostructure which is able to spontaneously dope graphene (ptype) up to n ~ 2.2 × 10 cm while providing excellent charge mobility (µ ~ 25 000 cm V s ). Such properties are achieved via deposition of graphene on atomically flat layered talc, a natural and abundant dielectric crystal. Raman investigation shows a preferential charge accumulation on graphene-talc van der Waals heterostructures, which are investigated through the electronic properties of talc/graphene/hBN heterostructure devices. These heterostructures preserve graphene’s good electronic quality, verified by the observation of quantum Hall effect at low magnetic fields (B = 0.4 T) at T = 4.2 K. In order to investigate the physical mechanisms behind graphene-on-talc p-type doping, we performed first-principles calculations of their interface structural and electronic properties. In addition to potentially improving solar cell efficiency, graphene doping via van der Waals stacking is also a promising route towards controlling the band gap opening in bilayer graphene, promoting a steady n or p type doping in graphene and, eventually, providing a new path to access superconducting states in graphene, predicted to exist only at very high doping. 13 −2 2 −1 −1

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 29 Jan 2018 20:06
Last Modified: 15 Apr 2021 04:45
DOI: 10.1088/2053-1583/aa76f4