CUED Publications database

Monolithically-integrated distributed feedback laser compatible with CMOS processing.

Magden, ES and Li, N and Purnawirman, and Bradley, JDB and Singh, N and Ruocco, A and Petrich, GS and Leake, G and Coolbaugh, DD and Ippen, EP and Watts, MR and Kolodziejski, LA (2017) Monolithically-integrated distributed feedback laser compatible with CMOS processing. Opt Express, 25. pp. 18058-18065.

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An optically-pumped, integrated distributed feedback laser is demonstrated using a CMOS compatible process, where a record-low-temperature deposited gain medium enables integration with active devices such as modulators and detectors. A pump threshold of 24.9 mW and a slope efficiency of 1.3 % is demonstrated at the lasing wavelength of 1552.98 nm. The rare-earth-doped aluminum oxide, used as the gain medium in this laser, is deposited by a substrate-bias-assisted reactive sputtering process. This process yields optical quality films with 0.1 dB/cm background loss at the deposition temperature of 250 °C, and therefore is fully compatible as a back-end-of-line CMOS process. The aforementioned laser's performance is comparable to previous lasers having gain media fabricated at much higher temperatures (> 550 °C). This work marks a crucial step towards monolithic integration of amplifiers and lasers in silicon microphotonic systems.

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 21 Feb 2019 01:23
Last Modified: 10 Apr 2021 01:04
DOI: 10.1364/OE.25.018058