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Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface

Park, JH and Sanne, A and Guo, Y and Amani, M and Zhang, K and Movva, HCP and Robinson, JA and Javey, A and Robertson, J and Banerjee, SK and Kummel, AC (2017) Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface. Science Advances, 3. e1701661-.

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Abstract

Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS is investigated as a defect passivation method. A strong negative charge transfer from MoS to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the I /I in back-gated MoS transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS . The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex. 2 2 ON OFF 2 2

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 06 Feb 2018 01:24
Last Modified: 08 Apr 2021 06:59
DOI: 10.1126/sciadv.1701661