CUED Publications database

Low inductance switching for SiC MOSFET based power circuit

Shelton, E and Zhang, X and Zhang, T and Hari, N and Palmer, P (2017) Low inductance switching for SiC MOSFET based power circuit. In: UNSPECIFIED pp. 5093-5100..

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Wide Band Gap power semiconductor switching devices offer superior performance compared to an equivalent Si power device. SiC MOSFETs can be competitive when compared to Si IGBTs of the same voltage class, whilst offering greater benefits at high switching frequencies. Operating SiC MOSFETs at high switching frequencies imposes significant challenges, including: Ringing and voltage overshoot issues, making accurate high bandwidth measurements, and the requirement for a highperformance gate drive circuit. This paper presents a prototype low inductance PCB design for a SiC MOSFET switching circuit. In addition, a linear current gate-drive circuit and a high bandwidth on-board measurement system have been developed and the designs for these are presented. The measurement system showed good agreement with the external probe measurements and superior bandwidth. Hard-switching tests with a 900V SiC MOSFET showed that the dVds/dt becomes largely invariant to changes in load current when using a current source gate drive. The measured dVds/dt slew rates are compared with the dVds/dt slew rates estimated from the parameter values given in the SiC MOSFET datasheet, and the two sets of results show good agreement. In this paper, the performance of an optimised circuit is successfully demonstrated and the benefits are discussed.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Depositing User: Cron Job
Date Deposited: 16 Nov 2018 20:11
Last Modified: 10 Apr 2021 22:25
DOI: 10.1109/ECCE.2017.8096858