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Analysis of amorphous indium-gallium-zinc-oxide thin-film transistors with bi-layer gate dielectric stacks using Maxwell-Wagner instability model

Kiani, A and Bayer, BC and Hasko, DG and Milne, WI and Flewitt, AJ (2017) Analysis of amorphous indium-gallium-zinc-oxide thin-film transistors with bi-layer gate dielectric stacks using Maxwell-Wagner instability model. In: UNSPECIFIED pp. 347-356..

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Abstract

Aluminum oxide (Al O ) and hafnium oxide (HfO ) have been grown, using atomic layer deposition (ALD), as single and bi-layer gate dielectric films. Electrical and structural characterization indicates that the material properties depend on layer thickness and growth order, when deposited as bi-layers. Charge trApplng at the interface between the bi-layer stacks results from the Maxwell-Wagner (MW) instability, which states a difference of conductivities at the dielectric-dielectric interface with respect to the bulk dielectric films. Hence a build-up of this interface charge compensates for the condition that the current densities of individual dielectric films match that of the overall stack. This causes electrical instabilities in stack behavior. Bottom-gate amorphous indium-gallium-zinc-oxide thin-film transistors are fabricated with these gate oxides, single and bi-layer stacks, with low Vm and gate leakage current to understand this instability. By empirically adopting ideal MOSFET equations and single gate dielectric film behavior as a reference, this MW instability in bi-layer gate dielectric stacks has been accounted for in amorphous indium-gallium-zinc-oxide thin-film transistor transfer characteristics with a good fit in both above threshold and subthreshold regimes. 2 3 2

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 20 Mar 2018 01:43
Last Modified: 10 Apr 2021 22:28
DOI: 10.1149/08001.0347ecst