CUED Publications database

An experimental comparison of GaN, SiC and Si switching power devices

Palmer, P and Zhang, X and Shelton, E and Zhang, T and Zhang, J (2017) An experimental comparison of GaN, SiC and Si switching power devices. In: UNSPECIFIED pp. 780-785..

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Abstract

This paper presents an experimental switching behaviour comparison of GaN HEMT and SiC MOSFET against their Si competitors, the Si SJ MOSFET and high speed Si IGBT, in the 650 V class. The devices are first compared using their respective datasheets. The test circuit is introduced and hard switching tests under inductive load are performed to reveal the switching performance of the devices. The differences in the switching behaviours of the devices are identified and discussed.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron Job
Date Deposited: 16 Nov 2018 20:11
Last Modified: 10 Apr 2021 22:28
DOI: 10.1109/IECON.2017.8216135