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Single-crystal growth: From new borates to industrial semiconductors

Wang, G and Chen, X (2010) Single-crystal growth: From new borates to industrial semiconductors. Physica Status Solidi (A) Applications and Materials Science, 207. pp. 2757-2768. ISSN 1862-6300

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In this paper, we present our progresses on single-crystal growth of a variety of compounds from new borates to industrial semiconductors, reflecting our efforts in new compounds exploration, structure analysis, property characterization, flux growth, and vapor growth of industrial semiconductors. Typical examples are selected with each serving to show one theme. YBa B O and ErBa B O , two members of a newly discovered series RBa B O (R = Y, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb) are found to be potential scintillation materials and laser hosts. KZnB O , the first borate with edge-sharing BO tetrahedra obtained under ambient conditions, shows a very interesting selective ion exchange. The study of a well-known crystal YVO reveals that the negative refraction (NR) is an intrinsic property of all uniaxial crystals. For technically important crystals, our emphases are placed on the study of growth methods. GaN is successfully realized to grow under very facile conditions based on a flux method developed from combining the phase relation calculation and experiments. Achievements on growth of 2-4 inch quality SiC wafers, both semi-insulating and conducting, through improved physical vapor transport (PVT) method are also reported. A brief summary and our perspectives on crystal growth are given at the end. 2-4-inch n-type 4H-SiC wafers grown by a PVT method. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 3 9 18 3 9 18 3 9 18 3 6 4 4

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 12 May 2018 20:06
Last Modified: 01 Apr 2021 04:36
DOI: 10.1002/pssa.201026453