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The effects of grain boundary response and electrode contact response on the dielectric properties of CaCu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf>

Li, M and Zhang, DF and Wang, WY and Wang, G and Chen, XL (2010) The effects of grain boundary response and electrode contact response on the dielectric properties of CaCu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf>. Journal of Physics D: Applied Physics, 43. ISSN 0022-3727

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Abstract

The influences of dc bias on complex impedance, complex module and dielectric response of CaCu Ti O for different sintering durations have been investigated to elucidate the origin of its dielectric properties. It is found that both the electrode contact response and grain boundary response contribute to the dielectric constant of CaCu Ti O . The origins of the semicircles in complex impedance plots of CaCu Ti O have also been investigated. At 120 °C, the mid-frequency semicircle in complex impedance plots represents the electrode contact response and the low-frequency semicircle may correspond to the oxygen-vacancy relevant response. The semicircle of the grain boundary response in the complex impedance plot is covered by the semicircle of the electrode contact response at this temperature. © 2010 IOP Publishing Ltd. 3 4 12 3 4 12 3 4 12

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 12 May 2018 20:06
Last Modified: 01 Apr 2021 04:36
DOI: 10.1088/0022-3727/43/29/295405